Electrical-thermal coupling mechanism on operating limit of LDMOS transistor

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 83-86

  Chung, Y S ^a   Baird, B ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ENERGY DISSIPATION; IMPACT IONIZATION; ULSI CIRCUITS;

ELECTRICAL-THERMAL COUPLINGS (ETC);

MOSFET DEVICES;

EID: 0034454163     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. "Energy capability of power device with Cu layer" & "Transient thermal simulation ..."
2. Snapback and safe operating area of LDMOS transistor
3. Energy capability of lateral and vertical DMOS transistor ...
4. Clamped inductive switching of LDMOST for smart power IC's
5. Rigorous thermodynamic treatment of heat generation and conduction in semi conductor device modeling