Implementation of high-side, high-voltage RESURF LDMOS in a sub-half micron smart power technology

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 403-406

  Zhu, R ^a   Parthasarathy, V ^a   Khemka, V ^a   Bose, A ^a   Roggenbauer, T ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC POTENTIAL; INTEGRATED CIRCUIT LAYOUT; POWER ELECTRONICS; POWER SUPPLY CIRCUITS; SEMICONDUCTOR DOPING; SUBSTRATES;

MICRON SMART POWER TECHNOLOGY;

MOS DEVICES;

EID: 0034822557     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)