75 GHz bipolar production technology for the 21st century

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 88-94

  Klein, Wolfgang ^a   Klepser, Bernd Ulrich H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON ALLOYS; VARACTORS;

COLLECTOR EMITTERS; HIGH FREQUENCY ANALOG; MAXIMUM FREQUENCY OF OSCILLATIONS; MINIMUM NOISE FIGURE; N-P-N TRANSISTORS; PRODUCTION TECHNOLOGY; SELECTIVE EPITAXIAL GROWTH; VARACTOR DIODES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84907888144     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. H. Kose, R. Lachner, K.R. Schon, R. Mahnkopf, K.H. Malek, M. Kerber, H. Braun, A.V. Felde, J. Popp, O. Cohrs, E. Bertagnolli, and P. Sehrig ''6HF: A 0.8 Micron 25 GHz/25ps BIPOLAR Technology for "Mobile Radio" and "Ultra Fast Data Link" Ie-products", IEEE BCM, 1993, pp. 125-127.
2. T.F. Meister, H. Schifer, M. Franosch, W. MoIzer, K. Aufinger, U. Scheler, C. Walz, M. Stolz, S. Boguth, and J. Bock, "SiGe Base Bipolar Technology with 74 GHz fmax and 11 ps Gate Delay", IEDM Technical Digest, Publisher, Washington, 10.-13. Dec. 1995, pp. 739-741.