Effect of the tantalum barrier layer on the electromigration and stress migration resistance of physical-vapor-deposited copper interconnect

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 5 A, 2002, Pages 3057-3064

  Chin, Yu Lung ^a   Chiou, Bi Shiou ^a   Wu, Wen Fa ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Barrier layer; Cu films; Electromigration; Interconnect; Microstructure; Reliability; Ta Cu Ta multilayer

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTALLOGRAPHY; ELECTROMIGRATION; GRAIN SIZE AND SHAPE; METALLIC FILMS; MONOLAYERS; MULTILAYERS; PHYSICAL VAPOR DEPOSITION; STRESS ANALYSIS; TANTALUM; TEXTURES; THERMAL CYCLING; THERMAL STRESS;

COPPER INTERCONNECTS;

COPPER;

EID: 0036578069     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.3057     Document Type: Article

References (36)

1. Standard guide for design of flat, straight-line test structure for detecting metallization open-circuit or resistance-increase failure due to electromigration