Effect of aluminum seed layer on the crystallographic texture and electromigration resistance of physical vapor deposited copper interconnect

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 A, 2000, Pages 6708-6715

  Chin, Yu Lung ^a   Chiou, Bi Shiou ^a   Wu, Wen Fa ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Crystallographic texture; Cu films; Cu Al bilayer; Electromigration; Interconnect; Reliability; Seed layer

Indexed keywords

CRYSTALLOGRAPHY; ELECTROMIGRATION; METALLIZING; PHYSICAL VAPOR DEPOSITION; SPUTTER DEPOSITION; SUBSTRATES; TEXTURES;

ALUMINUM SEED LAYERS;

METALLIC FILMS;

EID: 0034473957     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6708     Document Type: Article

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