Electromigration: the time bomb in deep-submicron ICs

IEEE Spectrum

Volumn 33, Issue 9, 1996, Pages 75-78

  Li, Ping Chung ^a   Young, Tak K ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; FAILURE ANALYSIS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUITS; METALS; RELIABILITY; TRANSISTORS;

DEEP SUBMICRON DESIGNS; MEDIAN TIME TO FAILURE; SYSTEM FAILURE; VOLTAGE DROP;

ELECTROMIGRATION;

EID: 0030243163     PISSN: 00189235     EISSN: None     Source Type: None    
DOI: 10.1109/6.535398     Document Type: Article

References (5)

1. S. E. Schulz IC Reliability Keeps Deep Submicron Out of Deep Doo-Doo Integrated System Design 52 54 March 1996
2. J.-F. Tuan T. K. Young Reliability Issues in Power and Ground on Submicron Circuits Wescon 95 Proceedings Wescon 95 Proceedings
3. J.R. Black Electromigration—a Brief Survey and Some Recent Results IEEE Transactions on Electron Devices ED-16 338 341 April 1969
4. B.-K. Liew P. Fang N. Cheung C. Hu Circuit Reliability Simulator for Interconnect, Via, and Contact Electromigration IEEE Trans. on Electron Devices 39 11 2472 2479 November 1992
5. P.K. Chatterjee Trends for Deep Submicron VLSI and their Implications for Reliability Proceedings of the International Reliability Physics Symposium 1 11 Proceedings of the International Reliability Physics Symposium 1995