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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 192, Issue 3, 2002, Pages 291-300

Defect distribution in MeV proton irradiated silicon measured by high-voltage current transient spectroscopy

(3) Hazdra, P a Brand, K b Vobeckyy J a

a CZECH TECHNICAL UNIVERSITY IN PRAGUE (Czech Republic)

b RUHR UNIVERSITY BOCHUM (Germany)

Author keywords

Current transient spectroscopy; Lifetime control; Proton irradiation; Radiation defect profiles

Indexed keywords

DEFECTS; DIFFUSION; ION BOMBARDMENT; MONTE CARLO METHODS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS;

DEFECT DISTRIBUTION;

PROTON IRRADIATION;

EID: 0036576988 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(01)01161-2 Document Type: Article

Times cited : (18)

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