Measuring the generation lifetime profile modified by MeV H+ ion implantation in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 111-115

  Khanh N Q ^a   Kovacsics Cs ^b   Mohacsy T ^a   Adam M ^a   Gyulai, J ^a  

^a WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^b SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD   (Hungary)

Author keywords

Depth profiling; Direct wafer bonding; DLTS; Lifetime tailoring; MeV implantation; Zerbst method

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOSIMETRY; SEMICONDUCTING SILICON;

DEPTH PROFILING; DIRECT WAFER BONDING; LIFETIME TAILORING; TRANSIENT CAPACITANCE METHOD; ZERBST METHOD;

ION IMPLANTATION;

EID: 0032714697     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00595-3     Document Type: Article

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