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Solid State Communications

Volumn 122, Issue 7-8, 2002, Pages 359-362

X-ray scanning microscope study of strain instabilities in low mismatched SiGe alloys grown on Si(001) substrates

(6) Di Gaspare, L a Notargiacomo, A a Evangelisti, F a Palange, E b Pascarelli, S c Susini, J c

a ROMA TRE UNIVERSITY (Italy)

b UNIVERSITY OF L'AQUILA (Italy)

c EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

Author keywords

A. Semiconductors; A. Surfaces and interfaces; B. Epitaxy; C. X ray Scanning Microscopy

Indexed keywords

CRYSTAL DEFECTS; EPITAXIAL GROWTH; HETEROJUNCTIONS; SEMICONDUCTOR MATERIALS; STRAIN RATE; STRESS RELAXATION; X RAY PHOTOELECTRON SPECTROSCOPY;

X RAY SCANNING MICROSCOPY;

SILICON ALLOYS;

EID: 0036576909 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1098(02)00172-2 Document Type: Article

Times cited : (4)

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