Leakage currents in S1-xGex virtual substrates: Measurements and device implications

Semiconductor Science and Technology

Volumn 13, Issue 10, 1998, Pages 1215-1218

  Kanjanachuchai, S ^a   Thornton, T J ^b   Fernandez J M ^b   Ahmed, H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

VIRTUAL SUBSTRATES;

LEAKAGE CURRENTS;

EID: 0032182030     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/10/026     Document Type: Article

References (19)

1. Sadek A and Ismail K 1995 Solid State Electron. 38 1731
2. Hagelauer R, Ostermann T, König U, Glück M and Höck G 1997 Electron. Lett. 33 208
3. Luy J F, Strohm K M, Sasse H E, Schüppen A, Buechler J, Wollitzer M, Gruhle A, Schäffler F, Guettich U and Klaaßen A 1995 IEEE Trans. Microwave Theory Tech. 43 705
4. Welser J, Hoyt J L and Gibbons J F 1994 IEEE Trans. Electron Device Lett. 15 100
5. Ismail K, Chu J O and Meyerson B S 1994 Appl. Phys. Lett. 64 3124
6. Garone P M, Venkataraman V and Sturm J C 1992 IEEE Trans. Electron Device Lett. 13 56
7. Abstreiter G, Brugger H, Wolf T, Jorke H and Herzog H J 1985 Phys. Rev. Lett. 30 226
8. Mooney P M, Jordan-Sweet J L, Ismail K, Chu J O, Feenstra R M and LeGoues FK 1995 Appl. Phys. Lett. 67 16
9. Mii Y J, Xie Y H, Fitzgerald E A, Monroe D, Thiel F A and Weir B E 1995 Appl. Phys. Lett. 59 1611
10. LeGoues F K, Meyerson B S, Morar J F and Kirchner P D 1992 J. Appl. Phys. 71 4230
11. Hsu J W P, Fitzgerald E A, Xie Y H, Silverman P J and Cardillo M J 1992 Appl. Phys. Lett. 61 1293
12. Sze S M 1981 VLSI Technology 2nd edn (New York: McGraw-Hill) pp 76-7
13. Tersoff J and LeGoues F K 1994 Phys. Rev. Lett. 72 3570
14. Ismail K, Rishton S, Chu J O, Chan K and Meyerson B S 1993 IEEE Trans. Electron Device Lett. 14 348 Glück M, Hackbarth T, König U, Haas A, Höck G and Kohn E 1997 Electron. Lett. 33 335
15. Ismail K, Rishton S, Chu J O, Chan K and Meyerson B S 1993 IEEE Trans. Electron Device Lett. 14 348 Glück M, Hackbarth T, König U, Haas A, Höck G and Kohn E 1997 Electron. Lett. 33 335
16. Fernández J M, Matsumura A, Zhang X M, Xie M H, Hart L, Zhang J, Joyce B A and Thornton T J 1995 J. Mater. Sci.: Mater. Electron. 6 330
17. Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts 2nd edn (Oxford: Clarendon) p 39
18. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley) p 262
19. EMIS Datareviews 1988 Properties of Si (Inspec) p 816