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Volumn 211, Issue 1, 2000, Pages 378-383
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Growth of Ga-doped Ge0.98Si0.02 by vertical Bridgman with a baffle
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL STRUCTURE;
ETCHING;
GERMANIUM ALLOYS;
MICROANALYSIS;
MICROSTRUCTURE;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR DOPING;
SOLIDIFICATION;
ELECTRON PROBE MICROANALYSIS;
VERTICAL BRIDGMAN METHOD;
CRYSTAL GROWTH;
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EID: 0033898661
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00825-8 Document Type: Article |
Times cited : (43)
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References (17)
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