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Volumn 211, Issue 1, 2000, Pages 378-383

Growth of Ga-doped Ge0.98Si0.02 by vertical Bridgman with a baffle

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ETCHING; GERMANIUM ALLOYS; MICROANALYSIS; MICROSTRUCTURE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SOLIDIFICATION;

EID: 0033898661     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00825-8     Document Type: Article
Times cited : (43)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.