Multicomponent zone melting growth of ternary InGaAs bulk crystal

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 357-361

  Suzuki, T ^a   Nakajima, K ^a   Kusunoki, T ^a   Katoh, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

InGaAs; Multicomponent zone melting growth; Photoluminescence (PL); Ternary bulk crystal

Indexed keywords

EID: 0001254368     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666602     Document Type: Article

References (9)

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