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Applied Physics A: Materials Science and Processing

Volumn 74, Issue 5, 2002, Pages 711-718

Ni reactions with surfaces: Dependence of gettering efficiencies for Ni on crystal-growth conditions, back-side-gettering techniques, oxygen precipitates and thermal treatments

(3) Holzl R a Fabry, L b Range, K J a

a UNIVERSITY OF REGENSBURG (Germany)

b SILTRONIC AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; ETCHING; GETTERS; HEAT TREATMENT; MASS SPECTROMETRY; NICKEL; POLYSILICON; SEMICONDUCTOR DOPING; SILICON WAFERS;

CRYSTAL-ORIGINATED PARTICLES (COP);

SURFACE REACTIONS;

EID: 0036568679 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390100946 Document Type: Article

Times cited : (6)

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