Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 352-356

  Wellmann, P J ^a   Bushevoy, S ^a   Weingartner R ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Absorption measurement; Charge carrier concentration; Mapping; Silicon carbide

Indexed keywords

ABSORPTION SPECTROSCOPY; CARRIER CONCENTRATION; CHARGE CARRIERS; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTOR DOPING; SILICON WAFERS;

CHARGE CARRIER CONCENTRATION;

SILICON CARBIDE;

EID: 0035932244     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00598-5     Document Type: Article

References (11)