Growth of SiC ingots with high rate

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 296-299

  Dorozhkin, Sergei I ^a   Avrov, Dmitri D ^a   Rastegaev, Vladimir P ^a   Tairov, Yuri M ^a  

^a SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

Author keywords

Monocrystals; SiC ingots; Sublimation method

Indexed keywords

CRYSTAL GROWTH; INCLUSIONS; INGOTS; POLYCRYSTALS; SUBLIMATION; SURFACE STRUCTURE;

MICROPIPE DENSITY; MONOCRYSTALS;

SILICON CARBIDE;

EID: 0008891199     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00006-8     Document Type: Article

References (12)

1. A. Lely, Ber. Disch. Keram. Ges., 32 (1995) 229.
2. Yu.M. Tairov, Rost. Krist., 6 (1965) 199.
3. D.R. Hamilton, J. Electrochem. Soc., 105 (1958) 735.
4. W.F. Knippenberg, Philos. Res. Rep., 18 (1963) 16.
5. Yu.M. Tairov, V.F. Tsvetkov, Silicon Carbide, 1973 (1973) 146.
6. Yu.M. Tairov, V.F. Tsvetkov, Rost. Krist., 13 (1980) 14.
7. Yu.M. Tairov, A.A. Kalnin, N.A. Smirnova, Neorg. Mater., 9 (1973) 125.
8. Yu.M. Tairov, V.F. Tsvetkov, Progress of Crystal Growth and Characterization, (1983) 111-162.
9. N.I. Dolotov, V.A. Karachinov, V.I. Levin, Yu.M. Tairov et al., Trans. YI Conf. on Crystals Growth, Zakchadzor, 2 (1985) 21.
10. A.S. Bakin, S.I. Doroznkin, Trans. 2nd Int. Hidh Temperature Electronics Conf., Charlotte, NC, 5-10 June 1994, Vol. 2, p. 169.
11. Yu.M. Tairov, Mater. Sci. Eng., B29 (1995) 83-89.
12. Modern Crystallography, V2, Moscow, 1980.