Study of boron incorporation during PVT growth of p-type SiC crystals

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 49-52

  Bickermann, M ^a   Hofmann, D ^a   Rasp, M ^a   Straubinger, T L ^a   Weingartner R ^a   Wellmann, P J ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BORON; CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTRIC PROPERTIES; NITROGEN; SINGLE CRYSTALS;

ALUMINUM DOPING; BORON DOPING; BULK CRYSTALS; CHEMICAL SEGREGATION COEFFICIENT; HOMOGENEITY;

SILICON CARBIDE;

EID: 4243366495     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.49     Document Type: Article

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