Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 357-361

  Weingartner R ^a   Bickermann, M ^a   Bushevoy, S ^a   Hofmann, D ^a   Rasp, M ^a   Straubinger, T L ^a   Wellmann, P J ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Absorption mapping; Crystal growth; Doping level determination; Polytypes; Silicon carbide

Indexed keywords

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL GROWTH; SEMICONDUCTOR DOPING;

DOPING LEVEL DISTRIBUTION;

SILICON CARBIDE;

EID: 0035932275     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00599-7     Document Type: Article

References (8)