Features of SiC single-crystals grown in vacuum using the LETI method

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 77-81

  Rastegaev, V P ^a   Avrov, D D ^a   Reshanov, S A ^a   Lebedev, A O ^b  

^a S Petersburg Stt E ^*  (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Polytypes; Silicon carbide crystals; The LETI method

Indexed keywords

ALUMINUM; COMPOSITION EFFECTS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAPHITE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; THERMAL EFFECTS; VACUUM APPLICATIONS;

LETI METHOD;

SILICON CARBIDE;

EID: 0008896830     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00449-8     Document Type: Article

References (4)

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3. V.P. Rastegaev et al., E-MRS1996, Spring Meeting, 4-7 June 1996, Strasbourg (France), Astract A-28.
4. Glushko V.P. Thermodynamics Features of Individual Matters, Moscow: Nauka. 1978.