Evaluation of thermal and growth stresses in heteroepitaxial AlN thin films formed on (0 0 0 1) sapphire by pulsed laser ablation

Journal of Crystal Growth

Volumn 240, Issue 1-2, 2002, Pages 80-86

  Keckes, J ^a   Six, S ^b   Tesch, W ^a   Resel, R ^c   Rauschenbach, B ^d,e  

^a UNIVERSITY OF LEOBEN   (Austria)

^b UNIVERSITY OF AUGSBURG   (Germany)

^c GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^d LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^e UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

A1. Stresses; A1. X ray diffraction; B1. Nitrides; B3. Laser ablation

Indexed keywords

ALUMINUM NITRIDE; EPITAXIAL GROWTH; ION BEAMS; ION BOMBARDMENT; LATTICE CONSTANTS; PULSED LASER DEPOSITION; RESIDUAL STRESSES; THERMAL EFFECTS; THERMAL EXPANSION; THERMAL STRESS;

HETEROEPITAXIAL THIN FILMS;

THIN FILMS;

EID: 0036538332     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)00877-1     Document Type: Article

References (21)