Epitaxial aluminum nitride films on sapphire formed by pulsed laser deposition

Thin Solid Films

Volumn 370, Issue 1, 2000, Pages 1-4

  Six, S ^a   Gerlach, J W ^a   Rauschenbach, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; EPITAXIAL GROWTH; LASER ABLATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; TEMPERATURE; TEXTURES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ALUMINUM NITRIDE; CHANNELING MEASUREMENTS; DEPOSITION RATE; ELASTIC RECOIL DETECTION ANALYSIS; PULSED LASER DEPOSITION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0033691187     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00960-3     Document Type: Article

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