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Journal of Crystal Growth

Volumn 219, Issue 1-2, 2000, Pages 1-9

Residual stresses in cubic and hexagonal GaN grown on sapphire using ion beam-assisted deposition

(3) Keckes, J a,c Gerlach, J W b Rauschenbach, B b

a UNIVERSITY OF LEOBEN (Austria)

b UNIVERSITY OF AUGSBURG (Germany)

c INSTITUTE OF CHEMISTRY (Slovakia)

Author keywords

GaN; IBAD; Stress; X ray diffraction

Indexed keywords

EID: 0002441171 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00595-9 Document Type: Article

Times cited : (10)

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