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Volumn 353-356, Issue , 2001, Pages 451-454
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Deep level investigation of pn-junctions formed by MeV aluminum and boron implantation into 4H-SiC
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
ANNEALING;
BORON;
CRYSTAL DEFECTS;
ELECTRON TRAPS;
GRAPH THEORY;
ION IMPLANTATION;
IONIZATION;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR DOPING;
SILICON CARBIDE;
SPECTROSCOPY;
ARRHENIUS PLOT ANALYSIS;
CARBON COBALT IMPLANTATION;
DEEP LEVEL INVESTIGATION;
IMPLANTATION INDUCED DEFECTS;
IMPLANTED PN-JUNCTION;
ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY;
PN-JUNCTIONS;
POST IMPLANTATION ANNEAL;
TRAP IONIZATION ENERGIES;
SEMICONDUCTOR JUNCTIONS;
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EID: 14344268989
PISSN: 02555476
EISSN: None
Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.353-356.451 Document Type: Article |
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Times cited : (3)
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References (6)
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