Vapor phase epitaxy growth of GaN on pulsed laser deposited ZnO buffer layer

Journal of Crystal Growth

Volumn 187, Issue 3-4, 1998, Pages 340-346

  Ueda, T ^a,b   Huang, T F ^a   Spruytte, S ^a   Lee, H ^a   Yuri, M ^b   Itoh, K ^b   Baba, T ^b   Harris Jr , J S ^a  

^a Stanford University   (United States)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Buffer layer; GaN; Pulsed laser deposition; Vapor phase epitaxy; ZnO

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; ZINC OXIDE;

GALLIUM NITRIDE; PULSED LASER DEPOSITION;

VAPOR PHASE EPITAXY;

EID: 0032474163     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00886-5     Document Type: Article

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