Bonding constraints at interfaces between crystalline Si and stacked gate dielectrics

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 201-206

  Lucovsky, G ^a   Phillips, J C ^a  

^a Campus Box 7908   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DIELECTRIC MATERIALS; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); NITRIDES; OXIDES; PERMITTIVITY; SEMICONDUCTING SILICON; SILICA;

BONDING CONSTRAINTS; INTERFACIAL BONDS;

INTERFACES (MATERIALS);

EID: 0033344207     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-201     Document Type: Conference Paper

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