Bonding constraints at interfaces between crystalline Si and stacked gate dielectrics

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 201-206

  Lucovsky, G ^a   Phillips, J C ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DIELECTRIC MATERIALS; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); NITRIDES; OXIDES; PERMITTIVITY; SEMICONDUCTING SILICON; SILICA;

BONDING CONSTRAINTS; INTERFACIAL BONDS;

INTERFACES (MATERIALS);

EID: 0033344207     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-201     Document Type: Conference Paper

References (17)

1. W.A. Harrison, E.A. Kraut, J.R. Waldrop and R.W. Grant, Phys. Rev. B 18, 1402 (1978).
2. G. Lucovsky, Y. Wu, H. Niimi, V. Misra and J.C. Phillips, Appl. Phys. Lett. 74, (5 April 1999).
3. J. Robertson and C.W. Chen, Appl. Phys. Lett. 74,1168 (1999).
4. F.L. Galeener, W. Stutius and G.T. McKinley, in The Physics of MOS Instilators, ed by G. Lucovsky, S.T. Pantelides and F.L. Galeener (Pergamon, NY, 1980), p. 77.
5. H.F. Luan, B.Z, Wu, L.G. Kang, B.Y. Kirn, R. Vrtis, D. Roberts and D.L. Kwong, IEDM Tech. Dig. 609(1998).
6. G.B. Alers, D.J. Werder, Y. Chabal, H.C. Lu, E.P. Gusev, E. Garfunkel, T. Gustafson and R.S. Urdahl, Appl. Phys. Lett. 73,1517 (1998).
7. G. Lucovsky, A. Rozaj-Brvar and R.F. Davis, in The Structure of Non-Crystalline Materials 1982, edited by P.H. Gaskell, J.M. Parker and E.A. Davis (Taylor and Francis, London, 1983), p. 193.
8. J.C. Phillips, J. Non-Cryst. Solids 34, 153 (1979);
9. J. Non-Cryst. Solids 47, 203 (1983).
10. H. He and M. F. Thorpe, Phys. Rev. Lett 54,2107 ( 1985).
11. J.C. Phillips, in Rigidity Theory and Applications, ed. by M.F. Thorpe and P. Duxbury, (Michigan State University Press, East Lansing, 1999) to be published.
12. G. Lucovsky and J.C. Phillips, J. Non-Cryst. Solids 227, 1221 (1998).
13. [12 J. H. Van der Merwe, J. Appl. Phys. 34, 123 (1963).
14. [13 V. Misra et al., submitted to IEEE Electron Device Trans. (1998).
15. [14 G. Lucovsky, J. Vac. Sci. Technol. A 16, 356 (1998).
16. H.Y. Yang, H. Niimi and G. Lucovsky, J. Appl. Phys. 83, 2327 (1998).
17. A. Chatterjee et al, IEDM Tech. Dig. 779 (1998).