Measurement of plasma parameters in an inductively coupled plasma reactor

AIP Conference Proceedings

Volumn 585, Issue , 2001, Pages 262-269

  Sasaki, Hiroshi ^a   Nanbu, Kenichi ^a   Takahashi, Masayoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAS DYNAMICS; GASES; INDUCTIVELY COUPLED PLASMA; PLASMA APPLICATIONS; PLASMA DENSITY; PLASMA DEVICES; SILICON WAFERS;

AXIAL DIRECTION; INDUCTIVELY COUPLED PLASMA (ICP); INDUCTIVELY COUPLED PLASMA REACTOR; MEASURING POINTS; PLASMA PARAMETER; PLASMA POTENTIAL; PLASMA PROPERTIES; RADIAL DISTRIBUTIONS;

ELECTRON TEMPERATURE;

EID: 85010771018     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.1407571     Document Type: Conference Paper

References (7)

1. Flamm, D. L. And Herb, D. K., Plasma Etching: An Introduction, Eds. Manos, D. M. And Flamm, D. L., New York: Academic Press, 1989.
2. Hopwood, J., Guuarnieri, C. R., Whitehair, S. J., and Cuomo, J. J., Langmuir probe measurements of a radio frequency induction plasma. J. Vac. Sci. Technol All (l), 152-156 (1993).
3. Hopwood, J., Review of inductively coupled plasmas for plasma processing. Plasma Sources Sci. Technol., 1, 109-116 (1992).
4. Nanbu, K., Morimoto, T., and Suetani, M. Direct Simulation Monte Carlo analysis of flows and etch rate in an inductively coupled plasma reactor. IEEE Trans. Plasma Sci. 27, 1379-1388 (1999).
5. Nanbu, K., Suetani, M., and Sasaki, H. Direct Simulation Monte Carlo (DSMC) modeling of silicon etching in radiofrequency chlorine discharge. Computational Fluid Dynamics Journal. 8, 257-265 (1999).
6. Nanbu, K., Nakagome, T., and Kageyama, J. Detailed structure of the afterglow of radio-frequency chlorine discharge. Jpn. J. Appl. Phys. 38, L951-L953 (1999).
7. Sasaki, H., Nanbu, K., and Takahashi, M. Basic plasma properties in a high-density ICP etching apparatus. Proc. 17th Symp. Plasma Processing (Nagasaki, Japan), 125-128 (2000).