Planar laser-induced fluorescence of fluorocarbon radicals in oxide etch process plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 2207-2212

  Hayashi, Shigenori ^a,b   Ishikawa, Kenji ^a   Sekine, Makoto ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b Semiconductor Company   (Japan)

Author keywords

CF2 radical; Fluorocarbon; Inductively coupled plasma; Planar laser induced fluorescence

Indexed keywords

CARRIER CONCENTRATION; DEPOSITION; ETCHING; FLUORESCENCE; FLUOROCARBONS; ION BOMBARDMENT; LASER APPLICATIONS; OXIDES; PLASMA APPLICATIONS;

CONCAVE DISTRIBUTION; FLUOROCARBON RADICALS; LASER INDUCED FLUORESCENCE;

INDUCTIVELY COUPLED PLASMA;

EID: 0036529223     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.2207     Document Type: Article

References (14)