Switch-off behavior of floating-body PD SOI MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 11, 1998, Pages 2372-2375

  Perron, L M ^a,b   Hamaguchi, C ^a   Lacaita, A L ^b   Maegawa, S ^c   Yamaguchi, Y ^c  

^a OSAKA UNIVERSITY   (Japan)

^b POLITECNICO DI MILANO   (Italy)

^c MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; LEAKAGE CURRENTS; SILICON ON INSULATOR TECHNOLOGY;

DRAIN CURRENTS; FLOATING BODY EFFECTS;

MOSFET DEVICES;

EID: 0032203293     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.726660     Document Type: Article

References (11)

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