Numerical analysis of the electrical characteristics of gate overlapped lightly doped drain polysilicon thin film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 A, 1999, Pages 3475-3481

  Pecora, Alessandro ^a   Massussi, Fabio ^a   Mariucci, Luigi ^a   Fortunato, Guglielmo ^a   Ayres, J Richard ^b   Brotherton, Stanley D ^b  

^a CNR   (Italy)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; IMPACT IONIZATION; LIQUID CRYSTAL DISPLAYS; NUMERICAL ANALYSIS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

GATE OVERLAPPED LIGHTLY DOPED DRAIN (GOLDD) STRUCTURE; POLYCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0032638893     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3475     Document Type: Article

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