Excimer-laser crystallized poly-Si TFT's with transparent gate

IEEE Transactions on Electron Devices

Volumn 43, Issue 4, 1996, Pages 576-579

  Kim, Chang Dong ^a   Matsumura, Masakiyo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; ELECTRODES; EXCIMER LASERS; GATES (TRANSISTOR); GLASS; HIGH ELECTRON MOBILITY TRANSISTORS; IRRADIATION; LIQUID CRYSTAL DISPLAYS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

EXCIMER LASER LIGHT IRRADIATION; POLYSILICON THIN FILM TRANSISTORS; TRANSPARENT GATE;

THIN FILM TRANSISTORS;

EID: 0030128120     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485540     Document Type: Article

References (13)

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