SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 167-172

Characterization of thick 4H-SiC hot-wall CVD layers

(6) Paisley, M J a Irvine, K G a Kordina, O a Singh, R a Palmour, J W a Carter Jr , C H a

a Arkansas Power Electronics International Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; HYDROGEN BONDS; POWER ELECTRONICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON CARBIDE; SURFACES; TEMPERATURE; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE MEASUREMENT; HOT WALL CHEMICAL VAPOR DEPOSITION SYSTEM; TRIMETHYL ALUMINUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033335166 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-572-167 Document Type: Conference Paper

Times cited : (8)

References (11)

1
- 0030182811
- S.Sriram, G.Augustine, A.A. Burk, Jr., R.C. Glass, H.M. Hobgood, P.A. Orphanos, L.B. Rowland, R.R. Siergiej, T.J. Smith, C.D. Brandt, M.C. Driver, and R.H. Hopkins, IEEE Electron Device Lett. 17, 369, (1996).
- (1996) IEEE Electron Device Lett. , vol.17 , pp. 369
- Sriram, S.¹ Augustine, G.² Burk Jr., A.A.³ Glass, R.C.⁴ Hobgood, H.M.⁵ Orphanos, P.A.⁶ Rowland, L.B.⁷ Siergiej, R.R.⁸ Smith, T.J.⁹ Brandt, C.D.¹⁰ Driver, M.C.¹¹ Hopkins, R.H.¹²

2
- 0001019588
- O. Kordina, J.P. Bergman, A. Henry, E. Janzén, S. Savage, J. Andre, L.P. Ramberg, U. Lindefeit, W. Hermansson, and K. Bergman, Appl. Phys. Lett. 67, 1561, (1995).
- (1995) Appl. Phys. Lett. , vol.67 , pp. 1561
- Kordina, O.¹ Bergman, J.P.² Henry, A.³ Janzén, E.⁴ Savage, S.⁵ Andre, J.⁶ Ramberg, L.P.⁷ Lindefeit, U.⁸ Hermansson, W.⁹ Bergman, K.¹⁰

3
- 0031103557
- J.N. Shenoy, J.A. Cooper, Jr., and M.R. Melloch, IEEE Electron Device Lett. 18, 93 (1997).
- (1997) IEEE Electron Device Lett. , vol.18 , pp. 93
- Shenoy, J.N.¹ Cooper Jr., J.A.² Melloch, M.R.³

4
- 0039010062
- Submitted to
- A.K. Agarwal, J.B. Casady, L.B. Rowland, S. Seshadri, W.F. Valek, and C.D. Brandt, Submitted to IEEE Electron Device Lett.
- IEEE Electron Device Lett.
- Agarwal, A.K.¹ Casady, J.B.² Rowland, L.B.³ Seshadri, S.⁴ Valek, W.F.⁵ Brandt, C.D.⁶

5
- 0031536335
- O. Kordina, C. Hallin, A. Henry, J. P. Bergman, I. Ivanov, A. Ellison, N. T. Son, and E. Janzen, Phys. Stat. Sol. B 202, p. 321 (1997).
- (1997) Phys. Stat. Sol. B , vol.202 , pp. 321
- Kordina, O.¹ Hallin, C.² Henry, A.³ Bergman, J.P.⁴ Ivanov, I.⁵ Ellison, A.⁶ Son, N.T.⁷ Janzen, E.⁸

6
- 33751125574
- O. Kordina, A. Henry, E. Janzen, and C.H. Carter, Jr., Silicon Carbide, III-Nitride and Related Materials 2, p. 107 (1997).
- (1997) Silicon Carbide, III-Nitride and Related Materials , vol.2 , pp. 107
- Kordina, O.¹ Henry, A.² Janzen, E.³ Carter Jr., C.H.⁴

7
- 0031649342
- T. Kimoto, A. Itoh, N. Inoue, O. Takemura, et al., Mater. Sci. Forum 264-8, 675 (1998).
- (1998) Mater. Sci. Forum , vol.264 , Issue.8 , pp. 675
- Kimoto, T.¹ Itoh, A.² Inoue, N.³ Takemura, O.⁴

8
- 0031536334
- D.J. Larkin, Phys. Stat. Sol. (b) 202, 305 (1997).
- (1997) Phys. Stat. Sol. (b) , vol.202 , pp. 305
- Larkin, D.J.¹

9
- 21544460438
- A.A. Burk, Jr., and L.B. Rowland, Appl. Phys. Lett. 68, 382 (1996).
- (1996) Appl. Phys. Lett. , vol.68 , pp. 382
- Burk Jr., A.A.¹ Rowland, L.B.²

10
- 0003757116
- PWS Publishing
- B. J. Baliga, Power Semiconductor Devices (PWS Publishing, 1996).
- (1996) Power Semiconductor Devices
- Baliga, B.J.¹

11
- 33751143238
- Rensselaer Polytechnic Institute, private communication
- Paul Chow, Rensselaer Polytechnic Institute, private communication.
- Chow, P.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.