Effect of doping profile on the potential performance of buried channel SiGeC/Si heterostructure MOS devices

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 957-960

  Cassan, Eric ^a   Dollfus, P ^a   Galdin, S ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Buried channel; SiGeC heterojunction; Ultra short MOSFET

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TUNNELING; HETEROJUNCTIONS; MOS CAPACITORS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; TRANSPORT PROPERTIES;

GATE LEAKAGES;

MOSFET DEVICES;

EID: 0036493146     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00244-8     Document Type: Conference Paper

References (13)