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Journal of Non-Crystalline Solids

Volumn 280, Issue 1-3, 2001, Pages 63-68

Wave-mechanical study of gate tunneling leakage reduction in ultra-thin (<2 nm) dielectric MOS and H-MOS devices

(3) Cassan, E a Dollfus, P a Galdin, S a

a UNIV PARIS SUD (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS;

GATE TUNNELING LEAKAGE REDUCTION;

MOSFET DEVICES;

EID: 0034832090 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(00)00355-0 Document Type: Article

Times cited : (2)

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