Tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 495-503

  Tanaka, M ^a   Higo, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

GaMnAs; Magnetic semiconductor; Magnetic tunnel junction; Tunneling magnetoresistance

Indexed keywords

CRYSTAL STRUCTURE; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; MAGNETIC ANISOTROPY; MAGNETIZATION; MAGNETORESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; TUNNEL JUNCTIONS; VECTORS;

TUNNELING MAGNETORESISTANCE (TMR);

HETEROJUNCTIONS;

EID: 0036492818     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00178-9     Document Type: Conference Paper

References (22)