Tunneling magnetoresistance of a GaMnAs-based double barrier ferromagnetic tunnel junction

Journal of Applied Physics

Volumn 87, Issue 9 II, 2000, Pages 4673-4675

  Hayashi, T ^a   Tanaka, M ^a,b   Asamitsu, A ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001495319     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373126     Document Type: Article

References (17)

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2. T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya, and Y. Ootuka, Ninth International Conference On Molecular Beam Epitaxy, Malibu, August 1996; J. Cryst. Growth 175/176, 1063 (1997).
3. T. Hayashi, M. Tanaka, T. Nishinaga, and H. Shimada, 41st Conference on Magnetism and Magnetic Materials, Atlanta, November 1996; J. Appl. Phys. 81, 4865 (1997).
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5. Other groups are also studying the properties of GaMnAs independently; H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, Appl. Phys. Lett. 69, 363 (1996); A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, T. Kuroiwa, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, J. Cryst. Growth 175/176, 1069 (1997).
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