Ferromagnetic semiconductor heterostructures based on (GaMn)As

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1247-1253

  Tanaka, M ^a,c   Shimizu, H ^a   Hayashi, T ^a   Shimada, H ^a   Ando, K ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; FERROMAGNETIC MATERIALS; MAGNETIC SEMICONDUCTORS; MAGNETIC THIN FILMS; MAGNETIZATION; MAGNETORESISTANCE; MANGANESE; SEMICONDUCTING GALLIUM COMPOUNDS; TUNNEL JUNCTIONS;

CURIE TEMPERATURE; FERROMAGNETIC ORDER;

HETEROJUNCTIONS;

EID: 0034227131     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582334     Document Type: Article

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