Photoluminescence of Mg-implanted GaN

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 23, Issue 2, 2002, Pages 149-152

  Xie, Shiyong ^a   Zheng, Youdou ^a   Chen, Peng ^a   Zhang, Rong ^a   Zhou, Yugang ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Doping; GaN; Gaussian fit; Ion implantation; Photoluminescence

Indexed keywords

ION IMPLANTATION; MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

GAUSSIAN FIT; MANGANESE IMPLANTED GALLIUM NITRIDES;

GALLIUM NITRIDE;

EID: 0036485567     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

1. P-type doping of GaN
2. Growth of p-type GaN and AlGaN epitaxial films
3. Doping Mg dose in MOCVD growth of P-GaN films
4. PL Characteristics of rapidly annealed Mg:GaN films
5. Growth of GaN films using light radiation heating metal chemical vapor deposition
6. Rutherford backscattering and channeling, double crystal X-ray diffraction and photoluminescence of GaN