Doping Mg dose in MOCVD growth of P-GaN films

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 21, Issue 4, 2000, Pages 365-368

  Li, Shuti ^a   Peng, Xuexin ^a   Xiong, Chuanbing ^a   Yao, Donming ^a   Xin, Yong ^a   Jiang, Fengyi ^a  

^a NANCHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

DOPING DOSE; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0034169703     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)