Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

Journal of Crystal Growth

Volumn 235, Issue 1-4, 2002, Pages 207-211

  Feng, Z H ^a   Yang, H ^a   Zhang, S M ^a   Duan, L H ^a   Wang, H ^a   Wang, Y T ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Crystal morphology; A1. Doping; A1. Surface structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semicondunting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE;

SURFACE SMOOTHNESS;

GALLIUM NITRIDE;

EID: 0036467116     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01914-5     Document Type: Article

References (12)