Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(1 0 0) by metal organic vapor phase epitaxy (MOVPE)

Journal of Crystal Growth

Volumn 203, Issue 1, 1999, Pages 40-44

  Xu, Da Peng ^a   Yang, Hui ^a   Zhao, D G ^a   Li, J B ^a   Zheng, L X ^a   Wang, Y T ^a   Li, S F ^a   Duan, L H ^a   Wu, R H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032687769     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00085-8     Document Type: Article

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