Emerging technologies for chip-level optical interconnects

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4652, Issue , 2002, Pages 213-224

  Oktyabrsky, Serge ^a   Castracane, James ^a   Kaloyeros, Alain ^a  

^a State University of New York   (United States)

Author keywords

Chip I O; Free space interconnects; Hybrid integration; IC; Optical interconnects; Quantum dots; VCSEL arrays

Indexed keywords

DIFFRACTIVE OPTICS; INTEGRATED OPTOELECTRONICS; OPTICAL LINKS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE;

FREE SPACE INTERCONNECTS; HYBRID INTEGRATION PROTOCOL; VERTICAL CAVITY SURFACE EMITTING LASER ARRAYS;

OPTICAL INTERCONNECTS;

EID: 0036406546     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.469568     Document Type: Conference Paper

References (25)

1. P.J. Ayliffe, J.W. Parker, and A. Robinson, "Comparison of optical and electrical data interconnections at the board and backplane levels," Optical Interconnections and Networks, Proc. SPIE, 1281, pp. 2-15, 1990.
2. G.I. Yayla, J. Marchand, and S.C. Esener, "Speed and energy analysis of digital interconnections: comparison of on-chip, off-chip, and free-space technologies," Applied Optics, 37, pp. 205-27, 1998.
3. A.V. Krishnamoorthy, A.L. Lentine, K.W. Goossen, et al., "3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver - transmitter circuit," IEEE Photonics Technology Letters, 7, pp. 1288-90, 1995.
4. Y. Liu, "Smart pixel module development for free space optical interconnects," Proceedings of the SPIE, 3490, pp. 528-31, 1998.
5. X. Zheng, J. Marchand, D. Huang, et al., "Free-space parallel multichip interconnection system," Appl. Opt., 39, pp. 3516-24, 2000.
6. H. Neefs, "Optoelectronic interconnects for integrated circuits, Achievements 1996-2000," European Commission, IST programme, ftp://ftp.cordis.lu/pub/esprit/meloprm3.pdf, 2000.
7. K. Jongwoo, P.S. Guilfoyle, R.V. Stone, et al., "32*16 CMOS smart pixel array for optical interconnects," Proc. SPIE, 4089, pp. 721-4, 2000.
8. M.H. Ayliffe, D.R. Rolston, A.E.L. Chuah, et al., "Design and testing of a kinematic package supporting a 32*32 array of GaAs MQW modulators flip-chip bonded to a CMOS chip," J. Lightwave Technology, 19, pp. 1543-59, 2001.
9. Technology Roadmap. Optoelectronic interconnects for integrated circuits, European Commission, ESPRIT programme, http://www.alna.vub.ac.be/Links/meloprm2.pdf or ftp://ftp.cordis.lu/pub/ esprit/docs/meloprm2.pdf, 1998.
10. International Technology Roadmap for Semiconductors, 2001 Ed., http://public,itrs.net/Files/2001ITRS/Interconnect.pdf, 2001.
11. H.S. Hinton, "Progress in the smart pixel technologies," IEEE J. Selected Topics in Quantum Electronics, 2, pp. 14-23, 1996.
12. V. Tokranov, M. Yakimov, A. Katsnelson, et al., "InAs quantum dots in AlAs/GaAs short period superlattices: structure, optical characteristics and laser diodes," Progress in Semiconductor Materials for Optoelectronic Applications, MRS Proceedings, 692, pp. 2001.
13. S. Oktyabrsky, V, Tokranov, M. Yakimov, et al., "Vertically Coupled InAs Quantum Dots Embedded into Short-Period AlAs/GaAs Superlattice," in Semiconductor Quantum Dots, MRS, 642, pp. 3.30.1-6, 2001.
14. D. Bimberg, M. Grundmann, F. Heinrichsdorff, et al., "Quantum dot lasers: breakthrough in optoelectronics," Thin Solid Films 367, pp. 235-49, 2000.
15. A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, et al., "Gain characteristics of quantum dot injection lasers," Semi. Sci. Tech., 14, pp. 118-23, 1999.
16. P.G. Eliseev, H. Li, A. Stintz, et al., "Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes," Appl. Phys. Let., 77, pp. 262-4, 2000.
17. Z. Zhou, D.L. Huffaker, S. Csutak, et al., "Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting lasers," Applied Physics Letters, 75, pp. 22-4, 1999.
18. J.A. Lott, N.N. Ledentsov, V.M. Ustinov, et al., "InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm," Electron. Lett., 36, pp. 1384-5, 2000.
19. J. Castracane and M. Gutin, "MEMS-based microgratings: preliminary results of novel configurations," Proceedings of the SPIE, 3276, pp. 196-206, 1998.
20. J. Castracane, B, Xu, C. Baks, et al., "MOEMS arrays for interconnect applications," Proceedings of the SPIE, 4178, pp. 141-8, 2000.
21. V. Joshkin, A. Orlikovsky, S. Oktyabarsky, et al., "Biaxial compression in GaAs thin films grown on Si," J. Cryst. Growth, 147, pp. 1-2, 1995.
22. J.A. Carlin, S.A. Ringel, E.A. Fitzgerald, et al., "Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/Ge/Si substrates," Appl. Phys. Lett., 76, pp. 1884-6, 2000.
23. Y. Hasegawa, T. Egawa, T. Jimbo, et al., "GaAs-based LED on Si substrate with GaAs islands active region by droplet-epitaxy," Appl. Surf. Sci., 100-101, pp. 482-6, 1996.
24. Y.S. Chang, S. Naritsuka, and T. Nishinaga, "Optimization of growth condition for wide dislocation-free GaAs on Si substrate by microchannel epitaxy," J. Crystal Growth, 192, pp. 18-22, 1998.
25. T. Egawa, Y. Hasegawa, T. Jimbo, et al., "Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates," Appl. Phys. Let., 67, pp. 2995-7, 1995.