In-situ RHEED observation of MOCVD-GaN film growth

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 559-564

  Sumiya, Masatomo ^a   Ogusu, Noritaka ^a   Osada, Kouhei ^a   Fuke, Shunro ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; CRYSTALLIZATION; EVAPORATION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE CLEANING;

BUFFER LAYER; FILM DEPOSITION PROCESS; FLOW RATE; GROWTH MECHANISM;

GALLIUM NITRIDE;

EID: 0036373987     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)