High electric stress and insulation challenges in integrated microelectronic circuits

IEEE Electrical Insulation Magazine

Volumn 18, Issue 1, 2002, Pages 16-20

  Oldervoll, Frøydis ^a  

^a SINTEF   (Norway)

Author keywords

Degradation and breakdown of the gate insulator; Electrostatic discharges; High permittivity materials; Scaling of integrated circuits; Silicon dioxide

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC DISCHARGES; ELECTRIC INSULATING MATERIALS; LEAKAGE CURRENTS; MICROELECTRONICS; MOS DEVICES; THIN FILMS;

ELECTRIC STRESS;

ELECTRIC INSULATION;

EID: 0036194641     PISSN: 08837554     EISSN: None     Source Type: Journal    
DOI: 10.1109/57.981324     Document Type: Article

References (16)

1. Cramming more components onto integrated circuits
2. The electronic structure at the atomic scale of ultrathin gate oxides
3. 2 based dielectrics for future CMOS applications
4. 2
5. Reliability: A possible showstopper for oxide thickness scaling?
6. Failure physics of ultra-thin SiO2 gate oxides near their scaling limit
7. Scaling the gate dielectric: Materials, integration and reliability
8. Making silicon nitride film a viable gate dielectric
9. 2 dielectrics
10. 2) - Based gate insulators
11. Electrostatic discharge in semiconductor devices: An overview
12. Electrostatic discharges (ESD), latch-up and pad design constraints
13. ESD protection methodology for deep-sub-micron CMOS