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Volumn 46, Issue 1, 2002, Pages 45-48

Characteristics of InGaP/GaAs co-integrated δ-doped heterojunction bipolar transistor and doped-channel field effect transistor

(1) Tsai, Jung Hui a

a NATIONAL KAOHSIUNG NORMAL UNIVERSITY (Taiwan)

Author keywords

Doped heterojunction bipolar transistor; Co integrated; Doped channel field effect transistor; InGaP GaAs; Offset voltage; Transconductance

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CURRENT GAIN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036132424 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00272-6 Document Type: Article

Times cited : (4)

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