Theoretical and experimental investigation of the collector-emitter offset voltage of AlGaAs/GaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 622-627

  Bovolon, Nicola ^a,b   Schultheis, Rüdiger ^a   Müller, Jan Erik ^b   Zwicknagl, Peter ^a,b   Zanoni, Enrico ^a,b  

^a UNIVERSITY OF PADOVA   (Italy)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; TEMPERATURE;

BIPOLAR JUNCTION TRANSISTOR; COLLECTOR EMITTER OFFSET VOLTAGE; SEMICONDUCTOR DEVICE MEASUREMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032647544     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753692     Document Type: Article

References (10)

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