SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 39, Issue 8, 1996, Pages 1137-1142

Characteristics of functional heterostructure-emitter bipolar transistors (HEBTs)

(4) Thei, Kong Beng a Tsai, Jung Hui a Liu, Wen Chau a Lour, Wen Shiung b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRONS; NEGATIVE RESISTANCE; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

AVALANCHE MULTIPLICATION; EMITTER BASE POTENTIAL SPIKES; EMITTER NEUTRAL REGION; HETEROSTRUCTURE EMITTER BIPOLAR TRANSISTORS; INVERTED MODE; LOW OFFSET VOLTAGE; NEGATIVE DIFFERENTIAL RESISTANCE; NORMAL OPERATION MODE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030213588 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(96)00010-X Document Type: Review

Times cited : (8)

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