Characteristics of camel-gate structures with active doping channel profiles

Solid-State Electronics

Volumn 39, Issue 3, 1996, Pages 343-347

  Tsai, Jung Hui ^a   Lour, Wen Shiung ^b   Laih, Lih Wen ^a   Liu, Rong Chau ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); NUMERICAL ANALYSIS; PERFORMANCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

BARRIER HEIGHT; CAMEL GATE FIELD EFFECT TRANSISTORS; CHANNEL DOPING PROFILE; DRAIN CURRENT DENSITY; DRAIN SOURCE SATURATION CURRENT;

FIELD EFFECT TRANSISTORS;

EID: 0030102310     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00141-7     Document Type: Article

References (11)

1. R. E. Thorne, S. L. Su, W. Kopp, R. J. Fischer, T. J. Drummond and H. Morkoc, J. appl. Phys. 53, 5951 (1982).
2. J. M. Shannon, J. appl. Phys. 35, 63 (1979).
3. B. J. Goldsmith and S. D. Brotherton, IEEE Trans. Electron Devices 37, 1074 (1990).
4. R. E. Thorne, S. L. Su, R. J. Fischer, W. F. Kopp, W. G. Lyons, P. A. Miller and H. Morkoc, IEEE Trans. Electron Devices ED-30, 212 (1983).
5. W. C. Liu, W. S. Lour, C. Y. Sun and H. R. Chen, Thin Solid Films 1 (1991).
6. T. L. Lin, S. M. Dejewski, A. Ksendzov and E. W. Jones, IEEE Trans. Electron Devices ED-38, 2696 (1991).
7. J. M. Woodcock and J. J. Harris, Electron Lett. 19, 181 (1983).
8. A. Fathimulla, J. Abrahams, T. Loughran and H. Heir, IEEE Electron EDL-9, 328 (1988).
9. J. P. R. David, J. E. Sitch and M. S. Stem, IEEE Electron Device Lett. EDL-29, 1548 (1982).
10. B. Kim, H. Q. Tserng and H. D. Shih, IEEE Electron Device Lett. EDL-5, 494 (1984).
11. J. A. D. Alamo and T. Mizutani, IEEE Electron Device Lett. EDL-8, 534 (1987)