On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)

Solid-State Electronics

Volumn 39, Issue 12, 1996, Pages 1723-1730

  Tsai, Jung Hui ^a   Laih, Lih Wen ^a   Shih, Hui Jung ^a   Liu, Wen Chau ^a   Lin, Hao Hsiung ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

NEUTRAL EMITTER RECOMBINATION CURRENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030406970     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00121-9     Document Type: Article

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