InP-based mixed device (HEMT/HBT) technology on planar substrate for high performance mixed-signal and optoelectronic circuits

Electronics Letters

Volumn 33, Issue 24, 1997, Pages 2065-2066

  Kiziloglu, K ^a   Yung, M W ^a   Sun, H C ^a,b   Thomas III, S ^a   Kardos, M B ^a   Walden, R H ^a   Brown, J J ^a   Stanchina, W E ^a  

^a Hughes Aircraft Co   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

Author keywords

Indium phosphide; Integrated optoelectronics

Indexed keywords

ETCHING; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE MEASUREMENT; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

WET ETCHING;

INTEGRATED OPTOELECTRONICS;

EID: 0031274544     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971384     Document Type: Article

References (6)

1. STREIT, D.C., UMEMOTO, D.K., KOBAYASHI, K.W., and OKI, A.K.: 'Monolithic HEMT-HBT integration by selective MBE', IEEE Trans. Electron Devices, 1995, 42, (4), pp. 618-623
2. WANG, H., LIN, E., LO, D.C.W., TAI, R., TRAN, L., COWLES, J., CHEN, Y.C., BLOCK, T., LIU, P.H., YEN, H.C., and STAMPER, K.: 'A monolithic 24GHz frequency source using InP-based HEMT-HBT integration technology'. IEEE Radio Frequency Integrated Circuits Symp. Dig., 1997, pp. 79-81
3. STANCHINA, W.E., BROWN, J.J., HAFIZI, M., WALDEN, R.H., SUN, H.C., and RODWELL, M.: 'InP-based mixed signal/mixed device technology'. Int. Conf. GaAs Manufacturing Technol. Dig., 1996, pp. 160-163
4. STANCHINA, W.E., JENSEN, J.F., WALDEN, R.H., HAFIZI, M., SUN, H.C., LIU, T., RAGHAVAN, G., ELLIOTT, K.E., KARDOS, M., SCHMITZ, A.E., BROWN, Y.K., MONTES, M.E., and YUNG, M.: 'An InP-based HBT fabrication for high-speed digital, analog, mixed-signal, and optoelectronic ICs'. IEEE GaAs Integrated Circuit Symp. Tech. Dig., 1995, pp. 31-34
5. BROWN, J.J., SCHMITZ, A.E., LE, M., and HU, M.: 'High speed InP-based IC fabrication technology for both commercial and military system insertion'. MRS Spring Meeting Abstracts, 1997, pp. 65
6. MISHRA, U.K., BROWN, A.S., JELLOIAN, L.M., THOMPSON, M., NGUYEN, L.D., and ROSENBAUM, S.E.: 'Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs'. Int. Electron Dev. Meeting Tech. Dig., 1989, pp. 101-104