Scalable GalnP/GaAs HBT large-signal model

IEEE Transactions on Microwave Theory and Techniques

Volumn 48, Issue 12, 2000, Pages 2370-2376

  Rudolph, Matthias ^a   Doerner, Ralf ^b   Beilenhoff, Klaus ^c   Heymann, Peter ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^c DAIMLER AG   (Germany)

Author keywords

Equivalent circuits; Heterojunction bipolar transistors; Semiconductor device modeling; Semiconductor device thermal factors

Indexed keywords

CAPACITANCE; EQUIVALENT CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SIGNAL PROCESSING; THERMAL EFFECTS;

LARGE SIGNAL MODELS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034428953     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.898986     Document Type: Article

References (18)

1. C. T. Kirk, Jr., "A theory of transistor cutoff frequency (f ) falloff at high current densities," IRE Trans. Electron Devices, vol. ED-12, pp. 164-174, Mar. 1962.
2. R. J. Whittier and D. A. Tremere, "Current gain and cutoff frequency falloff at high currents," IEEE Trans. Electron Devices, vol. ED-16, pp. 39-57, Jan. 1969.
3. W. Liu and J. S. Harris, "Current dependence of base-collector capacitance of bipolar transistors," Solid-State Electron., vol. 35, no. 8, pp. 1051-1057, Aug. 1992.
4. R. G. Davis and M. B. Allenson, "Unified HBT base push-out and base-collector capacitance model," Solid-State Electron., vol. 38, no. 2, pp. 481-485, Feb. 1995.
5. L. H. Camnitz, S. Kofol, T. Low, and S. R. Bahl, "An accurate, large signal, high frequency model for GaAs HBTs," in GaAs IC Symp. Dig., 1996, pp. 303-306.
6. M. Rudolph, R. Doerner, and P. Heymann, "Direct extraction of HBT equivalent circuit elements," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 82-84, Jan. 1999.
7. C. M. Snowden, "Large-signal microwave characterization of Al-GaAs/GaAs HBT's based on a physics-based electrothermal model," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 58-71, Jan. 1997.
8. T. Peyretaillade, M. Perez, S. Mons, R. Sommet, P. Auxemery, J. C. Lalaurie, and R. Quéré, "A pulsed-measurement based electrothermal model of HBT with thermal stability prediction capabilities," in IEEE MTT-S Int. Microwave Symp. Dig., 1997, pp. 1515-1518.
9. R. Hajji and F. M. Ghannouchi, "Small-signal distributed model for GaAs HBT's and S-parameter prediction at millimeter-wave frequencies," IEEE Trans. Electron Devices, vol. ED-44, pp. 723-732, May 1997.
10. M. Rudolph, R. Doerner, E. Richter, and P. Heymann, "Scaling of GaInP/GaAs HBT equivalent-circuit elements," in GAAS'99 Dig., pp. 113-116.
11. M. Achouche, T. Spitzbart, P. Kurpas, F. Brunner, J. Würfl, and G. Tränkle, "High performance InGaP/GaAs HBT's for mobile communications," Electron. Lett., vol. 36, no. 12, pp. 1073-1075, June 2000.
12. P. C. Grossman and J. Choma, Jr., "Large signal modeling of HBT's including self-heating and transit time effects," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 449-464, Mar. 1992.
13. C.-J. Wei, J. C. M. Hwang, W.-J. Ho, and J. A. Higgins, "Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBT's," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2641-2647, Dec. 1996.
14. Q. M. Zhang, H. Hu, J. Sitch, R. K. Surridge, and J. M. Xu, "A new large signal HBT model," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2001-2009, Nov. 1996.
15. A. Samelis, "Modeling the bias dependence of the base-collector capacitance of power heterojunction bipolar transistors," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 642-645, May 1999.
16. D. A. Ahmari, G. Raghavan, Q. J. Hartmann, M. L. Hattendorf, M. Feng, and G. E. Stillman, "Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior," IEEE Trans. Electron Devices, vol. 46, pp. 634-640, Apr. 1999.
17. B. A. Kramer and R. J. Weber, "Base-emitter diffusion capacitance in GaAlAs/GaAs HBTs," Electron. Lett., vol. 28, no. 12, pp. 1106-1107, June 1992.
18. N. Bovolon, P. Baureis, J.-E. Müller, P. Zwicknagl, R. Schultheis, and E. Zanoni, "A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 45, no. 8, pp. 1846-1848, Aug. 1998