Non-quasi-static model of GaIn/AlGaAs HBT for power applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1997, Pages 379-382

  Fraysse, J Ph ^a   Floriot, D ^a   Auxemery, Ph ^a   Campovecchio, M ^a   Quere, R ^a   Obregon, J ^a  

^a UNIVERSITY OF LIMOGES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MODELS; SPECTRUM ANALYSIS; THERMAL EFFECTS;

NONLINEAR (NL) MODEL; TRANSCAPACITANCES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030647304     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)